Semiconductor etching gas
C4F6C4F6 (Hexafluorobutadiene)
High-purity hexafluoro-1,3-butadiene for plasma-chemical etching, supplied in steel cylinders against an agreed technical specification.
Plasma-chemical etching
Controlled impurities for semiconductor processing.
C4F6 is used in semiconductor plasma etching where non-condensed gases, moisture, carbon dioxide and hydrogen fluoride require controlled limits. The quotation should define process requirements, quantity, cylinder preference, destination and documentation.
Quality parameters
Typical product specification
| Parameter | Typical limit | Method |
|---|---|---|
| Appearance | Colourless, transparent liquid phase; no mechanical impurities | Visual inspection |
| C4F6 purity | ≥99.995 vol% | GC |
| Non-condensed gases, gas phase | ≤35 vppm | GC |
| CO2, gas phase | ≤15 vppm | GC |
| Water, liquid phase | ≤2.2 wppm | Karl Fischer |
| HF, liquid phase | ≤1.5 wppm | Electrometric method with ion-selective electrode |
Quality boundary. Values above describe a typical product specification. Final product quality is defined only by the agreed specification and the Certificate of Analysis for the specific batch.
Methods of analysis
Separate gas- and liquid-phase controls.
Gas chromatography (GC) is used for purity, non-condensed gases and carbon dioxide; water is measured by Karl Fischer analysis; HF is assessed by an electrometric method with an ion-selective electrode.
For a useful quotation
Define the C4F6 requirement.
Share the etching process context and required impurity limits so the commercial offer can be matched to the application.
Start a C4F6 enquiry- Required quantity
- Target purity and impurity limits
- Application and end use
- Preferred cylinder format
- Tare ownership
- Destination country and city
- Required delivery date
- Required documents